 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere CHT8050PT FEATURE * Small surface mounting type. (SOT-23) * High DC current . SOT-23 .041 (1.05) .033 (0.85) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) .066 (1.70) * NPN transistors in one package. (3) (2) MARKING * D805 * E805 .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B C (3) .045 (1.15) .033 (0.85) E(2) .019 (0.50) Dimensions in millimeters SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - -55 - -55 MIN. MAX. 25 20 5 700 225 +150 150 +150 UNIT V V V mA mW C C C 2008-01 Note 1. Transistor mounted on an FR4 printed-circuit board. RATING CHARACTERISTIC CURVES ( CHT8050PT ) CHARACTERISTICS Tamb = 25 C unless otherwise speciped. SYMBOL PARAMETER V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage CONDITIONS IC = -10uA ; IE = 0A IC = -1mA ; IB = 0A IE = -10uA ; IC = 0A VCB = 20V VEB = 5V IC = 150 mA; VCE = 1V IC = 500 mA; IB = 50 mA IC = 150 mA; VCE = 1.0V VCB=-10V; f=1.0MHZ; IE=0 VCB=10V; Ic=20mA; f=100MHz MIN. 25 20 5 - - 150 - - - 150 MAX. - - - 1.0 100 500 500 1000 10 - mV mV pF MHz V V V uA nA UNIT V(BR)EBO ICBO IEBO hFE VCEsat VBEon Ccb fT emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain collector-emitter saturation base-emitter voltage output capacitance transition frequency 2. hFE: D Classification: 150~300 E Classification: 250~500 RATING CHARACTERISTIC CURVES ( CHT8050PT ) Figure 1. Collector-Emitter Saturation Voltage vs Collector Current COLLECTOR-EMITTER SATURATION VOLTAGE, VCEsat(mV) 10000 Figure 2. Base-Emitter Saturation Voltage vs Collector Current 10000 1000 BASE-EMITTER SATURATION VOLTAGE, VBEsat(V) IC/IB=10 IC/IB=10 1000 Ta = 25oC 100 Ta = 25oC 100 10 0.1 1.0 10 100 1000 10000 10 0.1 1.0 10 100 1000 10000 COLLECTOR CURRENT, IC(A) COLLECTOR CURRENT, IC(A) Figure 3. DC Current Gain 1000 VCE=1.0V DC CURRENT GAIN, hFE 100 10 0.1 1.0 10 100 1000 10000 COLLECTOR CURRENT, IC(A) |
Price & Availability of CHT8050PT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |